High power discrete devices are commonly used in various applications, such as power electronics and energy storage systems. A key part is the MOSFET which plays an important role.

Testing these devices at the system level can be challenging due to the complexity of the hardware and the required high voltage isolation.

Different resources would be used in MOSFET testing, such as a 3KV power source and/or 1000A current source. The ETS88D is a good choice to integrate these types of resources.

Even an ETS88D has some limitation – it could not be used for direct docking to a handler or prober, therefore we would design cables for this solution.

In this paper, we discuss a comprehensive solution to test 32 sites power MOSFET wafer on the ETS88D. The framework includes the design and implementation of a DIB and module board layout, the selection and use of cables, stiffeners, and mechanical parts, as well as the consideration of safety measures and isolation techniques.

This solution not only covers existing or common test items, but can also be defined by customers themselves for some special testing, which can be realized on the customized board.

The Power MOSFET Wafer Test Solution provides a reliable and efficient method for testing high power discrete devices at the system level and can be useful for researchers and engineers in the field of power electronics and energy storage systems.