Manufacturing of GaN power transistors is still a challenge. They sometimes show undesirable characteristics and need to be screened out. An example is the current collapse effect – dynamic RDSON. A Dynamic RDSON test can be included in the test list for GaN power devices. This test will be done by doing several RDSON measurements (at least 2) with a stress voltage pulse between the first and the second measurements (pre- and post measurements).

This paper will provide an overview of the GaN discrete power device with its characteristics and also describe the dynamic RDSON test method, its test setup with parameters and discuss the challenges in implementing this method. The test method was developed on an ETS88-DUO-TH but the basic concept can be applied to any test platform that has the capability to provide the required current and switching speed.