Power devices such as MOSFETs and IGBTs are widely used in power supplies, motors, and inverters. Measuring transient thermal resistance is one of key factors to ensure the manufacturing quality of power devices. The Thermal Resistance Unit (TRU2.0) provides variety of transient thermal resistance testing methods for discrete power devices such as MOSFETs, IGBTs, and DIODEs. The TRU2.0 is enhanced from previous version to support SiC N-Channel MOSFET and Enhanced-mode GaN HEMT with programmable gate-off voltage and wide measurement range for dVSD.

This presentation will provide an overview of the TRU2.0 and its programming techniques with measurement examples.